Structures by: Urushiyama H.
Total: 8
Type I silicon-gallium clathrate
Ga5.39Na8Si40.61
RSC Advances (2018) 8, 71 40505
a=10.3210(4)Å b=10.3210(4)Å c=10.3210(4)Å
α=90.00° β=90.00° γ=90.00°
Type I silicon-gallium clathrate
Ga4.94Na8Si41.06
RSC Advances (2018) 8, 71 40505
a=10.3020(2)Å b=10.3020(2)Å c=10.3020(2)Å
α=90° β=90° γ=90°
Type I silicon-gallium clathrate
Ga5.52Na8Si40.48
RSC Advances (2018) 8, 71 40505
a=10.3210(3)Å b=10.3210(3)Å c=10.3210(3)Å
α=90.00° β=90.00° γ=90.00°
Type I silicon-gallium clathrate
Ga5.06Na8Si40.94
RSC Advances (2018) 8, 71 40505
a=10.3090(2)Å b=10.3090(2)Å c=10.3090(2)Å
α=90.00° β=90.00° γ=90.00°
Type I silicon-gallium clathrate
Ga7.60Na5.04Si38.40Sr2.96
RSC Advances (2019) 9, 26 14586
a=10.3645(3)Å b=10.3645(3)Å c=10.3645(3)Å
α=90° β=90° γ=90°
Type I silicon-gallium clathrate
Ga9.10Na3.92Si36.90Sr4.08
RSC Advances (2019) 9, 26 14586
a=10.3804(4)Å b=10.3804(4)Å c=10.3804(4)Å
α=90° β=90° γ=90°
Type I silicon-gallium clathrate
Ga8.40Na4.20Si37.60Sr3.80
RSC Advances (2019) 9, 26 14586
a=10.3747(3)Å b=10.3747(3)Å c=10.3747(3)Å
α=90° β=90° γ=90°
Type I silicon-gallium clathrate
Ga5.70Na8Si40.30
RSC Advances (2018) 8, 71 40505
a=10.3266(2)Å b=10.3266(2)Å c=10.3266(2)Å
α=90.00° β=90.00° γ=90.00°